Dual N/P-Channel-Channel MOSFET, 7.2 A, 8 A, 40 V, 8-Pin SOIC Vishay SI4564DY-T1-GE3
- RS Stock No.:
- 165-7276
- Mfr. Part No.:
- SI4564DY-T1-GE3
- Manufacturer:
- Vishay
32500 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (On a Reel of 2500)
MYR5.401
| Units | Per Unit | Per Reel* |
| 2500 + | MYR5.401 | MYR13,502.50 |
| *price indicative | ||
- RS Stock No.:
- 165-7276
- Mfr. Part No.:
- SI4564DY-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Dual N/P-Channel MOSFET, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 7.2 A, 8 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 20 mΩ, 28 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 3.1 W, 3.2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, -16 V, +16 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |
| Width | 4mm |
| Typical Gate Charge @ Vgs | 20.5 nC @ 10 V, 41.5 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.55mm |