BSS315PH6327XTSA1 P-Channel MOSFET, 1.18 A, 30 V OptiMOS P, 3-Pin SOT-23 Infineon

  • RS Stock No. 165-6793
  • Mfr. Part No. BSS315PH6327XTSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 1.18 A
Maximum Drain Source Voltage 30 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 270 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 500 mW
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Series OptiMOS P
Height 1mm
Maximum Operating Temperature +150 °C
Length 2.9mm
Transistor Material Si
Width 1.3mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 2.3 nC @ 5 V
21000 In Global stock for delivery within 4 - 6 working days
Price Each (On a Reel of 3000)
MYR 0.369
units
Per unit
Per Reel*
3000 +
MYR0.369
MYR1,107.00
*price indicative
Related Products
OptiMOS™ products are available in high performance packages ...
Description:
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next ...
Infineon offers a large and comprehensive portfolio of ...
Description:
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit ...
The Infineon range of discrete HEXFET® power MOSFETs ...
Description:
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction ...
MOSFETs are made as ultra-low ON-resistance by the ...
Description:
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. 4V-drive typeNch Middle-power MOSFETFast Switching SpeedSmall ...