IPP100N10S305AKSA1 N-Channel MOSFET, 100 A, 100 V OptiMOS T, 3-Pin TO-220 Infineon

  • RS Stock No. 165-6746
  • Mfr. Part No. IPP100N10S305AKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): SG
Product Details

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 100 A
Maximum Drain Source Voltage 100 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5.1 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 300 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Maximum Operating Temperature +175 °C
Length 10mm
Height 9.25mm
Typical Gate Charge @ Vgs 135 nC @ 10 V
Minimum Operating Temperature -55 °C
Width 4.4mm
Series OptiMOS T
Transistor Material Si
1050 In Global stock for delivery within 4 - 6 working days
Price Each (In a Tube of 50)
MYR 12.544
units
Per unit
Per Tube*
50 +
MYR12.544
MYR627.20
*price indicative
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