- RS Stock No.:
- 165-3242
- Mfr. Part No.:
- STP3NK50Z
- Manufacturer:
- STMicroelectronics
Discontinued product
- RS Stock No.:
- 165-3242
- Mfr. Part No.:
- STP3NK50Z
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The M2 series of super-junction MOSFETs has been extended with the introduction of 650 V devices ensuring a higher safety margin for more robust and reliable applications. The low on-resistance (down to 0.36Ω in the TO-220 package) combined with low gate charge and input/output capacitances enable highly-efficient adapters, solar micro-inverters and lighting applications.
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Extremely high dv/dt capability
ESD improved capability
100% avalanche tested
Gate charge minimized
Zener-protected
ESD improved capability
100% avalanche tested
Gate charge minimized
Zener-protected
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 2.3 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO220AB |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 3.3 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 45 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 11 nC @ 10 V |
Length | 10.4mm |
Width | 4.6mm |
Height | 15.75mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.6V |