C2M0160120D SiC N-Channel MOSFET, 19 A, 1200 V, 3-Pin TO-247 Wolfspeed

  • RS Stock No. 162-9709
  • Mfr. Part No. C2M0160120D
  • Manufacturer Wolfspeed
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 19 A
Maximum Drain Source Voltage 1200 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 196 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.5V
Minimum Gate Threshold Voltage 2.4V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage -5 V, +20 V
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Height 21.1mm
Typical Gate Charge @ Vgs 34 nC @ 20 V, 34 nC @ 5 V
Minimum Operating Temperature -55 °C
Forward Diode Voltage 3.3V
Length 16.13mm
Transistor Material SiC
Width 5.21mm
210 In Global stock for delivery within 4 - 6 working days
Price Each (In a Tube of 30)
MYR 55.827
units
Per unit
Per Tube*
30 +
MYR55.827
MYR1,674.81
*price indicative
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