N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK Infineon IRF3710ZSTRLPBF

RS Stock No.:: 162-3302
Mfr. Part No.:: IRF3710ZSTRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK Infineon IRF3710ZSTRLPBF

Temporarily out of stock - back order for despatch 15/07/2024, delivery within 4 working days from despatch date

Added

Price Each (In a Pack of 10)

MYR7.477

Units	Per Unit	Per Pack*
10 - 190	MYR7.477	MYR74.77
200 - 390	MYR7.214	MYR72.14
400 +	MYR6.853	MYR68.53
*price indicative

RS Stock No.:: 162-3302
Mfr. Part No.:: IRF3710ZSTRLPBF
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	59 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	IRF3710ZS
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	18 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	160 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	82 nC @ 10 V
Width	9.65mm
Maximum Operating Temperature	+175 °C
Length	10.67mm
Forward Diode Voltage	1.3V
Height	4.83mm
Minimum Operating Temperature	-55 °C