PMV30XPEAR 3 P-Channel MOSFET, -5.3 A, -20 V, 3-Pin SOT-23 Nexperia

  • RS Stock No. 153-1886
  • Mfr. Part No. PMV30XPEAR
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Very fast switching
Enhanced power dissipation capability: Ptot = 980 mW
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current -5.3 A
Maximum Drain Source Voltage -20 V
Package Type SOT23, TO-236AB
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 57 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage -1.25V
Minimum Gate Threshold Voltage -0.75V
Maximum Power Dissipation 5435 mW
Transistor Configuration Single
Maximum Gate Source Voltage 12 V
Number of Elements per Chip 3
Minimum Operating Temperature -55 °C
Automotive Standard AEC-Q101
Typical Gate Charge @ Vgs 11 nC
Height 1mm
Maximum Operating Temperature +150 °C
Width 1.4mm
Length 3mm
325 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 25)
MYR 1.25
units
Per unit
Per Pack*
25 - 225
MYR1.25
MYR31.25
250 - 600
MYR0.939
MYR23.475
625 - 1225
MYR0.753
MYR18.825
1250 - 2475
MYR0.682
MYR17.05
2500 +
MYR0.627
MYR15.675
*price indicative
Packaging Options:
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