3 P-Channel MOSFET, -4.9 A, -12 V, 2-Pin WLCSP Nexperia PMCM4401VPEZ
- RS Stock No.:
- 153-0772
- Mfr. Part No.:
- PMCM4401VPEZ
- Manufacturer:
- Nexperia
Discontinued product
- RS Stock No.:
- 153-0772
- Mfr. Part No.:
- PMCM4401VPEZ
- Manufacturer:
- Nexperia
Technical data sheets
Legislation and Compliance
Product Details
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Low threshold voltage
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Battery switch
High-speed line driver
Low-side loadswitch
Switching circuits
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Battery switch
High-speed line driver
Low-side loadswitch
Switching circuits
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | -4.9 A |
| Maximum Drain Source Voltage | -12 V |
| Package Type | WLCSP |
| Mounting Type | Surface Mount |
| Pin Count | 2 |
| Maximum Drain Source Resistance | 160 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | -0.9V |
| Minimum Gate Threshold Voltage | -0.4V |
| Maximum Power Dissipation | 12500 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 8 V |
| Typical Gate Charge @ Vgs | 6.8 nC @ 10 V |
| Length | 0.75mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 3 |
| Width | 0.75mm |
| Height | 0.315mm |
| Minimum Operating Temperature | -55 °C |