N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2
- RS Stock No.:
- 146-4401
- Mfr. Part No.:
- IXFB150N65X2
- Manufacturer:
- IXYS
Discontinued product
- RS Stock No.:
- 146-4401
- Mfr. Part No.:
- IXFB150N65X2
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 150 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | PLUS264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 17 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 1.56 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Typical Gate Charge @ Vgs | 355 nC @ 10 V nC |
| Length | 20.26mm |
| Maximum Operating Temperature | +150 °C |
| Width | 5.31mm |
| Number of Elements per Chip | 1 |
| Height | 26.59mm |
| Forward Diode Voltage | 1.4V |
| Series | HiperFET |
| Minimum Operating Temperature | -55 °C |