N-Channel MOSFET, 97 A, 100 V, 3-Pin TO-220AB Infineon IRFB4410ZPBF
- RS Stock No.:
- 145-9198
- Mfr. Part No.:
- IRFB4410ZPBF
- Manufacturer:
- Infineon
100 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Tube of 50)
MYR7.087
| Units | Per Unit | Per Tube* |
| 50 + | MYR7.087 | MYR354.35 |
| *price indicative | ||
- RS Stock No.:
- 145-9198
- Mfr. Part No.:
- IRFB4410ZPBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 97 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 230 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4.82mm |
| Typical Gate Charge @ Vgs | 83 nC @ 10 V |
| Length | 10.66mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |
| Height | 9.02mm |