SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D

RS Stock No.:: 145-5875
Mfr. Part No.:: C2M0040120D
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0040120D

This image is representative of the product range

210 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ

Added

Price Each (In a Tube of 30)

MYR223.411

Units	Per Unit	Per Tube*
30 +	MYR223.411	MYR6,702.33
*price indicative

RS Stock No.:: 145-5875
Mfr. Part No.:: C2M0040120D
Manufacturer:: Wolfspeed

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	60 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	52 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	330 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-5 V, +20 V
Transistor Material	SiC
Typical Gate Charge @ Vgs	115 nC @ 20 V, 115 nC @ 5 V
Length	16.13mm
Width	5.21mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	21.1mm
Forward Diode Voltage	3.3V