FCPF850N80Z N-Channel MOSFET, 6 A, 800 V SuperFET II, 3-Pin TO-220F ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor

Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 6 A
Maximum Drain Source Voltage 800 V
Package Type TO-220F
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 710 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2.5V
Maximum Power Dissipation 28.4 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Width 4.9mm
Minimum Operating Temperature -55 °C
Series SuperFET II
Height 16.07mm
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 22 nC @ 10 V
Length 10.36mm
Transistor Material Si
Discontinued product
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