IRFHM9391TRPBF P-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin PQFN Infineon

  • RS Stock No. 130-0986
  • Mfr. Part No. IRFHM9391TRPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 11 A
Maximum Drain Source Voltage 30 V
Package Type PQFN
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 22.5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.4V
Minimum Gate Threshold Voltage 1.3V
Maximum Power Dissipation 2.6 W
Maximum Gate Source Voltage -25 V, +25 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 32 nC @ 10 V
Height 0.8mm
Series HEXFET
Maximum Operating Temperature +150 °C
Length 3.2mm
Minimum Operating Temperature -55 °C
Width 3.2mm
Forward Diode Voltage 1.2V
6600 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 25)
MYR 2.36
units
Per unit
Per Pack*
25 - 100
MYR2.36
MYR59.00
125 - 475
MYR2.242
MYR56.05
500 - 975
MYR1.92
MYR48.00
1000 - 2475
MYR1.681
MYR42.025
2500 +
MYR1.346
MYR33.65
*price indicative
Packaging Options:
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