N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4P7ATMA1
- RS Stock No.:
- 130-0906
- Mfr. Part No.:
- IPD80R1K4P7ATMA1
- Manufacturer:
- Infineon
2470 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 5)
MYR5.814
| Units | Per Unit | Per Pack* |
| 5 - 620 | MYR5.814 | MYR29.07 |
| 625 - 1245 | MYR5.522 | MYR27.61 |
| 1250 + | MYR5.246 | MYR26.23 |
| *price indicative | ||
- RS Stock No.:
- 130-0906
- Mfr. Part No.:
- IPD80R1K4P7ATMA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon CoolMOS™P7 Power MOSFET
The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | DPAK (TO-252) |
| Series | CoolMOS P7 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 32 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Length | 6.73mm |
| Typical Gate Charge @ Vgs | 10 nC @ 10 V |
| Width | 6.22mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Height | 2.41mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 0.9V |