P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 Infineon IPP80P03P4L04AKSA1
- RS Stock No.:
- 124-9058
- Mfr. Part No.:
- IPP80P03P4L04AKSA1
- Manufacturer:
- Infineon
350 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Tube of 50)
MYR10.532
| Units | Per Unit | Per Tube* |
| 50 - 50 | MYR10.532 | MYR526.60 |
| 100 - 150 | MYR10.37 | MYR518.50 |
| 200 + | MYR10.168 | MYR508.40 |
| *price indicative | ||
- RS Stock No.:
- 124-9058
- Mfr. Part No.:
- IPP80P03P4L04AKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 30 V |
| Series | OptiMOS P |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 137 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +5 V |
| Typical Gate Charge @ Vgs | 125 nC @ 10 V |
| Width | 4.4mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Length | 10mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 15.65mm |