FDN337N N-Channel MOSFET, 2.2 A, 30 V, 3-Pin SOT-23 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): GB
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 2.2 A
Maximum Drain Source Voltage 30 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 65 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 500 mW
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +8 V
Number of Elements per Chip 1
Width 1.4mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 7 nC @ 4.5 V
Height 0.94mm
Maximum Operating Temperature +150 °C
Length 2.92mm
Transistor Material Si
153000 In Global stock for delivery within 4 - 6 working days
Price Each (On a Reel of 3000)
MYR 0.446
units
Per unit
Per Reel*
3000 - 6000
MYR0.446
MYR1,338.00
9000 +
MYR0.431
MYR1,293.00
*price indicative
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