BUZ11_NR4941 N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 30 A
Maximum Drain Source Voltage 50 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 40 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2.1V
Maximum Power Dissipation 75 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Width 4.83mm
Length 10.67mm
Transistor Material Si
Maximum Operating Temperature +150 °C
Height 16.51mm
Temporarily out of stock - back order for despatch when stock is available
Price Each (In a Tube of 50)
MYR 3.714
units
Per unit
Per Tube*
50 - 50
MYR3.714
MYR185.70
100 - 200
MYR3.343
MYR167.15
250 - 450
MYR3.039
MYR151.95
500 - 950
MYR2.785
MYR139.25
1000 +
MYR2.572
MYR128.60
*price indicative
Related Products
20 V, P-channel Trench MOSFET, P-channel enhancement mode ...
Description:
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Trench MOSFET technologyVery fast switchingEnhanced power dissipation capability: Ptot = 980 mWElectroStatic Discharge ...
Resistor-equipped bipolar transistors, also known as “Digital Transistors” ...
Description:
Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. ...
This low threshold, enhancement-mode (normally-off) transistor utilizes a ...
Description:
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient ...
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS ...
Description:
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS ...