FDV303N N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 680 mA
Maximum Drain Source Voltage 25 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 450 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.65V
Maximum Power Dissipation 350 mW
Transistor Configuration Single
Maximum Gate Source Voltage +8 V
Number of Elements per Chip 1
Width 1.3mm
Minimum Operating Temperature -55 °C
Length 2.92mm
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 1.64 nC @ 4.5 V
Transistor Material Si
Height 0.93mm
12700 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 100)
MYR 0.36
units
Per unit
Per Pack*
100 - 400
MYR0.36
MYR36.00
500 - 900
MYR0.342
MYR34.20
1000 - 1900
MYR0.273
MYR27.30
2000 - 2900
MYR0.228
MYR22.80
3000 +
MYR0.195
MYR19.50
*price indicative
Packaging Options:
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