N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STMicroelectronics STB18N60DM2
- RS Stock No.:
- 111-6459
- Mfr. Part No.:
- STB18N60DM2
- Manufacturer:
- STMicroelectronics
Temporarily out of stock - back order for despatch 16/05/2025, delivery within 4 working days from despatch date
Added
Price Each (In a Pack of 5)
MYR14.13
| Units | Per Unit | Per Pack* |
| 5 - 245 | MYR14.13 | MYR70.65 |
| 250 - 495 | MYR13.206 | MYR66.03 |
| 500 + | MYR11.272 | MYR56.36 |
| *price indicative | ||
- RS Stock No.:
- 111-6459
- Mfr. Part No.:
- STB18N60DM2
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
Product Details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
AEC-Q101 qualified
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, STMicroelectronics
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 12 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | D2PAK (TO-263) |
| Series | MDmesh DM2 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 290 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 90 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Length | 9.35mm |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Width | 10.4mm |
| Forward Diode Voltage | 1.6V |
| Minimum Operating Temperature | -55 °C |
| Height | 4.6mm |