P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 Infineon IRLML5103TRPBF
- RS Stock No.:
- 302-038
- Mfr. Part No.:
- IRLML5103TRPBF
- Manufacturer:
- Infineon
20 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
70 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 5)
MYR1.662
| Units | Per Unit | Per Pack* |
| 5 - 745 | MYR1.662 | MYR8.31 |
| 750 - 1495 | MYR1.628 | MYR8.14 |
| 1500 + | MYR1.582 | MYR7.91 |
| *price indicative | ||
- RS Stock No.:
- 302-038
- Mfr. Part No.:
- IRLML5103TRPBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 760 mA |
| Maximum Drain Source Voltage | 30 V |
| Series | HEXFET |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 540 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 1.4mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 3.04mm |
| Typical Gate Charge @ Vgs | 3.4 nC @ 10 V |
| Transistor Material | Si |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |