N-Channel MOSFET, 120 A, 150 V, 3-Pin TO-247AD IXYS IXFH120N15P
- RS Stock No.:
- 194-237
- Mfr. Part No.:
- IXFH120N15P
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 07/08/2024, delivery within 4 working days from despatch date
Added
Price Each
MYR44.41
| Units | Per Unit |
| 1 - 7 | MYR44.41 |
| 8 - 14 | MYR41.36 |
| 15 + | MYR38.05 |
- RS Stock No.:
- 194-237
- Mfr. Part No.:
- IXFH120N15P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 150 V |
| Package Type | TO-247AD |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 16 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 600 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +175 °C |
| Length | 16.26mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V |
| Width | 5.3mm |
| Transistor Material | Si |
| Series | HiperFET, Polar |
| Height | 21.46mm |
| Minimum Operating Temperature | -55 °C |