Renesas NE3514S02-A N-Channel JFET, 4 V, Idss 15 to 70mA, 4-Pin SO2
- RS Stock No.:
- 772-5920
- Mfr. Part No.:
- NE3514S02-A
- Manufacturer:
- Renesas Electronics
Discontinued product
- RS Stock No.:
- 772-5920
- Mfr. Part No.:
- NE3514S02-A
- Manufacturer:
- Renesas Electronics
Technical data sheets
Legislation and Compliance
Product Details
N-Channel HEMT, Renesas
A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Idss Drain-Source Cut-off Current | 15 to 70mA |
| Maximum Drain Source Voltage | 4 V |
| Maximum Gate Source Voltage | -3 V |
| Configuration | Single |
| Transistor Configuration | Single |
| Mounting Type | Surface Mount |
| Package Type | SO2 |
| Pin Count | 4 |
| Dimensions | 2.6 x 2.6 x 1.5mm |
| Width | 2.6mm |
| Height | 1.5mm |
| Maximum Operating Temperature | +125 °C |
| Length | 2.6mm |