Panasonic DSK5J01R0L N-Channel JFET, Idss 5 → 12mA, 3-Pin SMini3 F2 B

  • RS Stock No. 169-7868
  • Mfr. Part No. DSK5J01R0L
  • Manufacturer Panasonic
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

N-channel JFET, Panasonic

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Specifications
Attribute Value
Channel Type N
Idss Drain-Source Cut-off Current 5 → 12mA
Maximum Drain Gate Voltage -55V
Configuration Single
Transistor Configuration Single
Mounting Type Surface Mount
Package Type SMini3 F2 B
Pin Count 3
Dimensions 2 x 1.25 x 0.8mm
Length 2mm
Maximum Operating Temperature +150 °C
Height 0.8mm
Width 1.25mm
Temporarily out of stock - back order for despatch 18/12/2019, delivery within 4 working days from despatch date
Price Each (On a Reel of 3000)
MYR 0.86
units
Per unit
Per Reel*
3000 +
MYR0.86
MYR2,580.00
*price indicative
Related Products
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.