onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole
- RS Stock No.:
- 739-4945
- Mfr. Part No.:
- FGH60N60SMD
- Manufacturer:
- onsemi
7 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR30.56
| Units | Per Unit |
| 1 - 7 | MYR30.56 |
| 8 - 14 | MYR29.49 |
| 15 + | MYR28.00 |
- RS Stock No.:
- 739-4945
- Mfr. Part No.:
- FGH60N60SMD
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 600 W |
| Package Type | TO-247AB |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.6 x 4.7 x 20.6mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |