Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole
- RS Stock No.:
- 601-2807
- Mfr. Part No.:
- GT30J322(Q)
- Manufacturer:
- Toshiba
1 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR21.92
| Units | Per Unit |
| 1 - 19 | MYR21.92 |
| 20 - 49 | MYR21.26 |
| 50 - 99 | MYR20.63 |
| 100 + | MYR20.01 |
- RS Stock No.:
- 601-2807
- Mfr. Part No.:
- GT30J322(Q)
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-3PNIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 21mm |
| Maximum Operating Temperature | +150 °C |