Infineon IHW30N135R3FKSA1 IGBT, 30 A 1350 V, 3-Pin TO-247

  • RS Stock No. 166-0979
  • Mfr. Part No. IHW30N135R3FKSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 1350 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 349 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.1mm
Dimensions 16.13 x 5.21 x 21.1mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +175 °C
Gate Capacitance 2066pF
Stock check temporarily unavailable - call for stock availability
Price Each (In a Tube of 30)
MYR 17.034
units
Per unit
Per Tube*
30 +
MYR17.034
MYR511.02
*price indicative
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