ON Semiconductor FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 120 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 600 W
Package Type TO-247AB
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.6mm
Width 4.7mm
Height 20.6mm
Dimensions 15.6 x 4.7 x 20.6mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
480 In Global stock for delivery within 4 - 6 working days
Price Each (In a Tube of 30)
MYR 19.494
units
Per unit
Per Tube*
30 - 30
MYR19.494
MYR584.82
60 - 120
MYR18.519
MYR555.57
150 - 270
MYR17.593
MYR527.79
300 - 570
MYR16.714
MYR501.42
600 +
MYR15.878
MYR476.34
*price indicative
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