Infineon IHW40N65R5XKSA1 IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 110-7143
- Mfr. Part No.:
- IHW40N65R5XKSA1
- Manufacturer:
- Infineon
284 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 4)
MYR20.008
| Units | Per Unit | Per Pack* |
| 4 + | MYR20.008 | MYR80.032 |
| *price indicative | ||
- RS Stock No.:
- 110-7143
- Mfr. Part No.:
- IHW40N65R5XKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 230 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.13 x 5.21 x 21.1mm |
| Energy Rating | 1.91mJ |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 4740pF |