- RS Stock No.:
- 168-4501
- Mfr. Part No.:
- MDI200-12A4
- Manufacturer:
- IXYS
Available for back order.
Added
Price Each (In a Box of 2)
MYR694.915
Units | Per Unit | Per Box* |
2 - 2 | MYR694.915 | MYR1,389.83 |
4 - 6 | MYR684.215 | MYR1,368.43 |
8 + | MYR670.865 | MYR1,341.73 |
*price indicative |
- RS Stock No.:
- 168-4501
- Mfr. Part No.:
- MDI200-12A4
- Manufacturer:
- IXYS
Legislation and Compliance
Product Details
IGBT Modules, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 270 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Configuration | Single |
Package Type | Y3 DCB |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Single |
Dimensions | 110 x 62 x 30mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |