IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount
- RS Stock No.:
- 124-0712
- Mfr. Part No.:
- MIXA450PF1200TSF
- Manufacturer:
- IXYS
48 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each
MYR960.79
| Units | Per Unit |
| 1 + | MYR960.79 |
- RS Stock No.:
- 124-0712
- Mfr. Part No.:
- MIXA450PF1200TSF
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 650 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 2.1 kW |
| Configuration | Dual |
| Package Type | SimBus F |
| Mounting Type | PCB Mount |
| Channel Type | N |
| Pin Count | 11 |
| Transistor Configuration | Series |
| Dimensions | 152 x 62 x 17mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +150 °C |