Toshiba TTD1409B,S4X(S Dual NPN Darlington Transistor, 6 A 400 V HFE:100, 3-Pin TO-220SIS
- RS Stock No.:
- 144-5246
- Mfr. Part No.:
- TTD1409B,S4X(S
- Manufacturer:
- Toshiba
30 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 10)
MYR4.746
| Units | Per Unit | Per Pack* |
| 10 - 20 | MYR4.746 | MYR47.46 |
| 30 + | MYR4.605 | MYR46.05 |
| *price indicative | ||
- RS Stock No.:
- 144-5246
- Mfr. Part No.:
- TTD1409B,S4X(S
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 6 A |
| Maximum Collector Emitter Voltage | 400 V |
| Maximum Emitter Base Voltage | 5 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Configuration | Single |
| Number of Elements per Chip | 2 |
| Minimum DC Current Gain | 100 |
| Maximum Base Emitter Saturation Voltage | 2.5 V |
| Maximum Collector Base Voltage | 600 V |
| Maximum Collector Emitter Saturation Voltage | 2 V |
| Maximum Collector Cut-off Current | 20µA |
| Length | 10mm |
| Base Current | 1A |
| Maximum Operating Temperature | +150 °C |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Power Dissipation | 25 W @ 25 °C |
| Width | 4.5mm |
| Height | 15mm |