- RS Stock No.:
- 122-0071
- Mfr. Part No.:
- MJ11016G
- Manufacturer:
- onsemi
600 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Tray of 100)
MYR28.50
Units | Per Unit | Per Tray* |
100 + | MYR28.50 | MYR2,850.00 |
*price indicative |
- RS Stock No.:
- 122-0071
- Mfr. Part No.:
- MJ11016G
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CZ
Product Details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
NPN Polarity
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.
High DC Current Gain
Monolithic Construction
Built-in Base Emitter Shunt Resistor
Junction Temperature: to +200°C
NPN Polarity
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum Continuous Collector Current | 30 A |
Maximum Collector Emitter Voltage | 120 V |
Maximum Emitter Base Voltage | 5 V |
Package Type | TO-204 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Number of Elements per Chip | 1 |
Minimum DC Current Gain | 200 |
Maximum Base Emitter Saturation Voltage | 5 V |
Maximum Collector Base Voltage | 120 V |
Maximum Collector Emitter Saturation Voltage | 4 V |
Length | 39.37mm |
Maximum Operating Temperature | +200 °C |
Minimum Operating Temperature | -55 °C |
Width | 26.67mm |
Height | 8.51mm |
Dimensions | 39.37 x 26.67 x 8.51mm |