ON Semi KSC2690AYS NPN Transistor, 1.2 A, 160 V, 3-Pin TO-126

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Power NPN Transistors, Fairchild Semiconductor

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 1.2 A
Maximum Collector Emitter Voltage 160 V
Package Type TO-126
Mounting Type Through Hole
Maximum Power Dissipation 20 W
Minimum DC Current Gain 60
Transistor Configuration Single
Maximum Collector Base Voltage 160 V
Maximum Emitter Base Voltage 5 V
Pin Count 3
Number of Elements per Chip 1
Maximum Base Emitter Saturation Voltage 1.3 V
Transistor Material Si
Dimensions 8 x 3.25 x 11mm
Length 8mm
Maximum Operating Temperature +150 °C
Maximum Collector Emitter Saturation Voltage 0.7 V
Width 3.25mm
Height 11mm
350 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 50)
MYR 1.545
units
Per unit
Per Pack*
50 - 50
MYR1.545
MYR77.25
100 - 200
MYR1.391
MYR69.55
250 - 450
MYR1.176
MYR58.80
500 - 950
MYR1.14
MYR57.00
1000 +
MYR1.085
MYR54.25
*price indicative
Packaging Options:
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Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.