BIP C77 PNP 5A 25V

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 5 (Continuous) A, 10 (Peak) A
Maximum Collector Emitter Voltage 40 V dc
Package Type TO-225
Mounting Type Through Hole
Maximum Power Dissipation 15 W
Minimum DC Current Gain 10
Transistor Configuration Single
Maximum Collector Base Voltage 25 V dc
Maximum Emitter Base Voltage 8 V dc
Maximum Operating Frequency 10 MHz
Pin Count 3
Number of Elements per Chip 1
Maximum Base Emitter Saturation Voltage 2.5 V dc
Width 3mm
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +150 °C
Height 11.1mm
Dimensions 7.8 x 3 x 11.1mm
Maximum Collector Emitter Saturation Voltage 1.8 V dc
Transistor Material Si
Length 7.8mm
2875 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 25)
MYR 1.735
units
Per unit
Per Pack*
25 - 50
MYR1.735
MYR43.375
75 - 100
MYR1.348
MYR33.70
125 - 225
MYR1.214
MYR30.35
250 - 350
MYR1.10
MYR27.50
375 +
MYR1.012
MYR25.30
*price indicative
Packaging Options:
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