onsemi MJE210G PNP Transistor, -10 A, -40 V, 3-Pin TO-225
- RS Stock No.:
- 184-4900
- Mfr. Part No.:
- MJE210G
- Manufacturer:
- onsemi
125 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ
Added
Price Each (In a Pack of 25)
MYR3.012
| Units | Per Unit | Per Pack* |
| 25 - 100 | MYR3.012 | MYR75.30 |
| 125 - 225 | MYR2.948 | MYR73.70 |
| 250 + | MYR2.86 | MYR71.50 |
| *price indicative | ||
- RS Stock No.:
- 184-4900
- Mfr. Part No.:
- MJE210G
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Transistor Type | PNP |
| Maximum DC Collector Current | -10 A |
| Maximum Collector Emitter Voltage | -40 V |
| Package Type | TO-225 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 15 W |
| Minimum DC Current Gain | 45 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 25 V dc |
| Maximum Emitter Base Voltage | 8 V dc |
| Maximum Operating Frequency | 10 MHz |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Dimensions | 7.8 x 3 x 11.1mm |
| Maximum Operating Temperature | +150 °C |