BIP T0220 PNP 8A 100V

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP), and 2N6043, 2N6045 (NPN) are complementary devices.

High DC Current Gain -hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045
Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Pb-Free Packages are Available

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 8 A
Maximum Collector Emitter Voltage 100 V dc
Package Type TO-220
Mounting Type Through Hole
Maximum Power Dissipation 75 W
Minimum DC Current Gain 1000
Transistor Configuration Single
Maximum Collector Base Voltage 100 V dc
Maximum Emitter Base Voltage 5 V dc
Maximum Operating Frequency 1 MHz
Pin Count 3
Number of Elements per Chip 1
Minimum Operating Temperature -65 °C
Maximum Collector Emitter Saturation Voltage 2 V dc
Maximum Base Emitter Saturation Voltage 4.5 V dc
Transistor Material Si
Width 4.83mm
Dimensions 10.53 x 4.83 x 15.75mm
Length 10.53mm
Maximum Operating Temperature +150 °C
Height 15.75mm
1250 In Global stock for delivery within 4 - 6 working days
Price Each (In a Tube of 50)
MYR 2.679
units
Per unit
Per Tube*
50 - 450
MYR2.679
MYR133.95
500 - 950
MYR1.948
MYR97.40
1000 +
MYR1.649
MYR82.45
*price indicative
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