Nexperia PBSS5480X,135 PNP Transistor, 4 A, 80 V, 4-Pin UPAK

  • RS Stock No. 166-0257
  • Mfr. Part No. PBSS5480X,135
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 4 A
Maximum Collector Emitter Voltage 80 V
Package Type UPAK
Mounting Type Surface Mount
Maximum Power Dissipation 2.5 W
Minimum DC Current Gain 80
Transistor Configuration Single
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 125 MHz
Pin Count 4
Number of Elements per Chip 1
Width 2.6mm
Minimum Operating Temperature -65 °C
Maximum Collector Emitter Saturation Voltage 0.38 V
Maximum Base Emitter Saturation Voltage 1 V
Dimensions 1.6 x 4.6 x 2.6mm
Height 1.6mm
Length 4.6mm
Maximum Operating Temperature +150 °C
8000 In Global stock for delivery within 4 - 6 working days
Price Each (On a Reel of 4000)
MYR 0.773
units
Per unit
Per Reel*
4000 +
MYR0.773
MYR3,092.00
*price indicative
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