Nexperia PHPT61006PYX PNP Transistor, -6 A, -100 V, 4 + Tab-Pin LFPAK56, SOT669

  • RS Stock No. 153-1976
  • Mfr. Part No. PHPT61006PYX
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge.

100 V, 6 A PNP high power bipolar transistor, PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY

High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement

Attribute Value
Transistor Type PNP
Maximum DC Collector Current -6 A
Maximum Collector Emitter Voltage -100 V
Package Type LFPAK56, SOT669
Mounting Type Surface Mount
Maximum Power Dissipation 25 W
Minimum DC Current Gain 10
Transistor Configuration Single
Maximum Collector Base Voltage -100 V
Maximum Emitter Base Voltage -8 V
Maximum Operating Frequency 116 MHz
Pin Count 4 + Tab
Number of Elements per Chip 1
Automotive Standard AEC-Q101
Height 1.05mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Maximum Base Emitter Saturation Voltage -1.25 V
Maximum Collector Emitter Saturation Voltage -1600 mV
Length 5mm
Width 4.1mm
Dimensions 5 x 4.1 x 1.05mm
4475 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 25)
Was MYR1.806
MYR 1.682
Per unit
Per Pack*
25 - 100
125 - 225
250 - 600
625 - 1225
1250 +
*price indicative
Packaging Options:
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