Nexperia PHPT60606NYX NPN Transistor, 6 A, 60 V, 4 + Tab-Pin LFPAK56, SOT669

  • RS Stock No. 153-1938
  • Mfr. Part No. PHPT60606NYX
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge.

60 V, 6 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY

High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Relay replacement
Motor drive

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 6 A
Maximum Collector Emitter Voltage 60 V
Package Type LFPAK56, SOT669
Mounting Type Surface Mount
Maximum Power Dissipation 25 W
Minimum DC Current Gain 40
Transistor Configuration Single
Maximum Collector Base Voltage 60 V
Maximum Emitter Base Voltage 7 V
Maximum Operating Frequency 180 MHz
Pin Count 4 + Tab
Number of Elements per Chip 1
Maximum Base Emitter Saturation Voltage 1.2 V
Width 4.1mm
Minimum Operating Temperature -55 °C
Height 1.05mm
Maximum Operating Temperature +175 °C
Length 5mm
Dimensions 5 x 4.1 x 1.05mm
Maximum Collector Emitter Saturation Voltage 360 mV
Automotive Standard AEC-Q101
4500 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 25)
MYR 1.618
units
Per unit
Per Pack*
25 - 100
MYR1.618
MYR40.45
125 - 225
MYR1.472
MYR36.80
250 - 600
MYR1.348
MYR33.70
625 - 1225
MYR1.284
MYR32.10
1250 +
MYR1.228
MYR30.70
*price indicative
Packaging Options:
Related Products
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...
The ON Semiconductor TIP120G is a medium power ...
Description:
The ON Semiconductor TIP120G is a medium power NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier and low-speed switching applications.The TIP120G comes in a plastic TO-220AB through-hole package. • ...
This array of seven Darlington transistor circuits is ...
Description:
This array of seven Darlington transistor circuits is able to drive high output current (500 mA). Built in input resistor limits the base currentBuild in clamp diode at the output absorbs surge currentsInput and output pins layout is separated on ...