Nexperia PHPT60603NYX NPN Transistor, 3 A, 60 V, 4 + Tab-Pin LFPAK56, SOT669

  • RS Stock No. 151-3120
  • Mfr. Part No. PHPT60603NYX
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

60V, 3 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60603PY

High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified

Attribute Value
Transistor Type NPN
Maximum DC Collector Current 3 A
Maximum Collector Emitter Voltage 60 V
Package Type LFPAK56, SOT669
Mounting Type Surface Mount
Maximum Power Dissipation 25 W
Minimum DC Current Gain 50
Transistor Configuration Single
Maximum Collector Base Voltage 60 V
Maximum Emitter Base Voltage 7 V
Maximum Operating Frequency 140 MHz
Pin Count 4 + Tab
Number of Elements per Chip 1
Width 4.1mm
Minimum Operating Temperature -55 °C
Maximum Collector Emitter Saturation Voltage 270 mV
Dimensions 5 x 4.1 x 1.05mm
Length 5mm
Maximum Operating Temperature +175 °C
Height 1.05mm
Automotive Standard AEC-Q101
4275 In Global stock for delivery within 4 - 6 working days
Price Each (In a Pack of 25)
MYR 1.276
Per unit
Per Pack*
25 - 100
125 - 225
250 - 600
625 - 1225
1250 +
*price indicative
Packaging Options:
Related Products
Up to 60 V VCEO and up to 800 mA IC, Delivering shorter storage times and significantly reduced switching times, our NPN and PNP switching transistors give you a design advantage. You can choose from a sizeable portfolio, with devices ...
Bipolar Junction Transistors (BJT) broad range provides complete ...
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
PNP/PNP matched double transistors in small Surface-Mounted Device ...
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Current gain matchingBase-emitter voltage matchingDrop-in replacement for standard double transistorsTarget applicationsCurrent mirrorDifferential amplifier.
A range of NXP BISS (Breakthrough In Small ...
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...