Infineon BFP740ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 45 mA, 4.9 V, 4-Pin SOT-343

  • RS Stock No. 145-8844
  • Mfr. Part No. BFP740ESDH6327XTSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 45 mA
Maximum Collector Emitter Voltage 4.9 V
Package Type SOT-343
Mounting Type Surface Mount
Maximum Power Dissipation 160 mW
Minimum DC Current Gain 160
Transistor Configuration Single
Maximum Collector Base Voltage 3 V
Maximum Emitter Base Voltage 0.5 V
Maximum Operating Frequency 45 GHz
Pin Count 4
Number of Elements per Chip 1
Length 2mm
Dimensions 2 x 1.25 x 0.9mm
Transistor Material SiGe
Maximum Operating Temperature +150 °C
Width 1.25mm
Height 0.9mm
Temporarily out of stock - back order for despatch 13/02/2020, delivery within 4 working days from despatch date
Price Each (On a Reel of 3000)
MYR 0.971
units
Per unit
Per Reel*
3000 +
MYR0.971
MYR2,913.00
*price indicative
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