ON Semi NST65010MW6T1G Dual PNP Transistor, 100 mA, 65 V, 6-Pin SOT-363

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Dual Matched Bipolar Transistors, ON Semiconductor

Pairs of NPN or PNP bipolar transistors in a single package matched for Base-Emitter voltage (VBE) and Current Gain (hFE).

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 100 mA
Maximum Collector Emitter Voltage 65 V
Package Type SOT-363 (SC-88)
Mounting Type Surface Mount
Maximum Power Dissipation 380 mW
Minimum DC Current Gain 220
Transistor Configuration Isolated
Maximum Collector Base Voltage -80 V
Maximum Emitter Base Voltage -5 V
Maximum Operating Frequency 100 MHz
Pin Count 6
Number of Elements per Chip 2
Maximum Collector Emitter Saturation Voltage -650 mV
Dimensions 2.2 x 1.35 x 1mm
Maximum Base Emitter Saturation Voltage -900 mV
Length 2.2mm
Minimum Operating Temperature -55 °C
Width 1.35mm
Height 1mm
Maximum Operating Temperature +150 °C
Temporarily out of stock - back order for despatch 14/02/2020, delivery within 4 working days from despatch date
Price Each (On a Reel of 3000)
MYR 0.276
units
Per unit
Per Reel*
3000 +
MYR0.276
MYR828.00
*price indicative
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