Nexperia PBSS4350T,215 NPN Transistor, 2 A, 50 V, 3-Pin SOT-23

  • RS Stock No. 103-7565
  • Mfr. Part No. PBSS4350T,215
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 2 A
Maximum Collector Emitter Voltage 50 V
Package Type SOT-23 (TO-236AB)
Mounting Type Surface Mount
Maximum Power Dissipation 1.2 W
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 50 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 100 MHz
Pin Count 3
Number of Elements per Chip 1
Width 1.4mm
Maximum Base Emitter Saturation Voltage 1.2 V
Maximum Collector Emitter Saturation Voltage 0.37 V
Minimum Operating Temperature -65 °C
Dimensions 1 x 3 x 1.4mm
Length 3mm
Height 1mm
Maximum Operating Temperature +150 °C
6000 In Global stock for delivery within 4 - 6 working days
Price Each (On a Reel of 3000)
MYR 0.422
units
Per unit
Per Reel*
3000 - 3000
MYR0.422
MYR1,266.00
6000 - 12000
MYR0.38
MYR1,140.00
15000 - 27000
MYR0.345
MYR1,035.00
30000 - 57000
MYR0.317
MYR951.00
60000 +
MYR0.292
MYR876.00
*price indicative
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