NXP PBSS305ND,115 NPN Transistor, 3 A, 100 V, 6-Pin TSOP

  • RS Stock No. 485-240
  • Mfr. Part No. PBSS305ND,115
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 3 A
Maximum Collector Emitter Voltage 100 V
Package Type TSOP
Mounting Type Surface Mount
Maximum Power Dissipation 2.5 W
Minimum DC Current Gain 25
Transistor Configuration Single
Maximum Collector Base Voltage 100 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 140 MHz
Pin Count 6
Number of Elements per Chip 1
Maximum Collector Emitter Saturation Voltage 0.36 V
Minimum Operating Temperature -65 °C
Maximum Base Emitter Saturation Voltage 1.02 V
Width 1.7mm
Length 3.1mm
Dimensions 1 x 3.1 x 1.7mm
Maximum Operating Temperature +150 °C
Height 1mm
Discontinued product