MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

What are depletion and enhancement modes?

MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

How do MOSFETs work?

The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

N-Channel vs. P-Channel MOSFETs

N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.


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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Package Type Mounting Type Pin Count Maximum Gate Source Voltage Channel Mode Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Power Dissipation Transistor Configuration Number of Elements per Chip
RS Stock No. 168-7519
Mfr. Part No.STP80NF12
MYR10.67
Each (In a Tube of 50)
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N 80 A 120 V 18 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement - 2V 300 W Single 1
RS Stock No. 194-546
Mfr. Part No.IXFH36N50P
BrandIXYS
MYR33.58
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N 36 A 500 V 170 mΩ TO-247AD Through Hole 3 -30 V, +30 V Enhancement 5V - 540 W Single 1
RS Stock No. 688-7159
Mfr. Part No.IRFU4615PBF
BrandInfineon
MYR7.75
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N 33 A 150 V 42 mΩ IPAK (TO-251) Through Hole 3 -20 V, +20 V Enhancement 5V 3V 144 W Single 1
RS Stock No. 671-0605
Mfr. Part No.FDS6680A
MYR3.37
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N 12.5 A 30 V 10 mΩ SOIC Surface Mount 8 -20 V, +20 V Enhancement - 1V 2.5 W Single 1
RS Stock No. 913-3837
Mfr. Part No.IRF1404PBF
BrandInfineon
MYR5.912
Each (In a Tube of 50)
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N 202 A 40 V 4 mΩ TO-220AB Through Hole 3 -20 V, +20 V Enhancement 4V 2V 333 W Single 1
RS Stock No. 168-3762
Mfr. Part No.FK3303010L
BrandPanasonic
MYR0.201
Each (On a Reel of 10000)
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N 100 mA 30 V 6 Ω SSSMini3 F2 B Surface Mount 3 -12 V, +12 V Enhancement 1.5V - 100 mW Single 1
RS Stock No. 178-0817
Mfr. Part No.IRF9640PBF
BrandVishay
MYR5.601
Each (In a Tube of 50)
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- - - - - - - - - - - - - -
RS Stock No. 168-7473
Mfr. Part No.STW34NM60ND
MYR33.95
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N 29 A 600 V 110 mΩ TO-247 Through Hole 3 -25 V, +25 V Enhancement 5V 3V 190 W Single 1
RS Stock No. 826-9954
Mfr. Part No.BSS138NH6327XTSA2
BrandInfineon
MYR0.446
Each (On a Reel of 500)
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N 230 mA 60 V 6 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 1.4V 0.6V 360 mW Single 1
RS Stock No. 708-2396
Mfr. Part No.2N7002-7-F
MYR0.298
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N 115 mA 60 V 13.5 Ω SOT-23 Surface Mount 3 -20 V, +20 V Enhancement 2.5V - 300 mW Single 1
RS Stock No. 919-4195
Mfr. Part No.SI4946BEY-T1-GE3
BrandVishay
MYR4.075
Each (On a Reel of 2500)
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N 6.5 A 60 V 52 mΩ SOIC Surface Mount 8 -20 V, +20 V Enhancement - 1V 3.7 W Isolated 2
RS Stock No. 671-5124
Mfr. Part No.FQP46N15
MYR10.816
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N 45 A 150 V 42 mΩ TO-220AB Through Hole 3 -25 V, +25 V Enhancement - 2V 210 W Single 1
RS Stock No. 820-8855
Mfr. Part No.IRFP7530PBF
BrandInfineon
MYR13.095
Each (In a Pack of 2)
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N 195 A 60 V 2 mΩ TO-247 Through Hole 3 -20 V, +20 V Enhancement 3.7V 2.1V 341 W Single 1
RS Stock No. 806-3541
Mfr. Part No.FDP030N06
MYR14.06
Each (In a Pack of 2)
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N 120 A, 193 A 60 V 3.2 mΩ TO-220 Through Hole 3 -20 V, +20 V Enhancement - 2.5V 231 W Single 1
RS Stock No. 178-0894
Mfr. Part No.SIHG64N65E-GE3
BrandVishay
MYR43.27
Each (In a Tube of 50)
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N 64 A 650 V 47 mΩ TO-247AC Through Hole 3 -30 V, +30 V Enhancement - 2V 520 W Single 1
RS Stock No. 541-0165
Mfr. Part No.IRFP350LCPBF
BrandVishay
MYR27.10
Each
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N 16 A 400 V 300 mΩ TO-247AC Through Hole 3 -30 V, +30 V Enhancement - 2V 190 W Single 1
RS Stock No. 862-8776
Mfr. Part No.FQPF7P20
MYR4.862
Each (In a Pack of 10)
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P 5.2 A 200 V 690 mΩ TO-220F Through Hole 3 -30 V, +30 V Enhancement - 3V 45 W Single 1
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BrandToshiba
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BrandToshiba
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N 9.7 A 600 V 380 mΩ TO-220SIS Through Hole 3 -30 V, +30 V Enhancement 3.7V - 100 W Single 1
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BrandVishay
MYR10.248
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N 20 A 500 V 270 mΩ TO-247AC Through Hole 3 -30 V, +30 V Enhancement - 3V 250 W Single 1