IGBT Modules

An IGBT module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFET. They are highly efficient and fast switching plus they have high current and low saturation voltage characteristics.

IGBT transistors are a three-terminal semiconductor device used as a switching element in power converters and variable speed drives to stop or allow power flow. IGBT transistors are controlled by a metal oxide semiconductor gate structure.

IGBT modules are widely used for switching electrical power in applications such as inverters, welding, motors, power conditioners, trains and uninterruptible power supplies.

A high-speed IGBT module is a product suitable for applications with switching frequencies between 20k and 50 kHz such as power supplies for medical equipment, welding machines, and induction heating. They include a boost chopper module and a half-bridge module.

IGBT modules have different configurations such as dual, 3-level, booster, common emitter, single switch, six-pack, chopper, PIM, PIM three-phase input rectifier, twelve pack, four pack and diode.

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Description Price Configuration Transistor Configuration Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Number of Transistors Channel Type Mounting Type Package Type Pin Count Switching Speed Maximum Power Dissipation Dimensions Height
RS Stock No. 168-4629
Mfr. Part No.7MBR100U4B-120-50
MYR814.933
Each (In a Box of 10)
units
3 Phase Bridge 3 Phase 100 A 1200 V ±20V - N PCB Mount M712 24 - 390 W 122 x 62 x 17mm 17mm
RS Stock No. 716-5674
Mfr. Part No.7MBR100U4B-120-50
MYR585.87
Each
units
3 Phase Bridge 3 Phase 100 A 1200 V ±20V - N PCB Mount M712 24 - 390 W 122 x 62 x 17mm 17mm
RS Stock No. 168-4544
Mfr. Part No.2MBI300U2B-060-50
MYR489.691
Each (In a Box of 20)
units
Series Series 300 A 600 V ±20V - N Panel Mount M233 7 - 1 kW 92 x 45 x 30mm 30mm
RS Stock No. 687-4967
Mfr. Part No.SKM50GB12T4
BrandSemikron
MYR375.66
Each
units
Dual Half Bridge Series 81 A 1200 V ±20V - N Panel Mount SEMITRANS2 7 - - 94 x 34 x 30.1mm 30.1mm
RS Stock No. 462-871
Mfr. Part No.2MBI300U2B-060-50
MYR493.94
Each
units
Series Series 300 A 600 V ±20V - N Panel Mount M233 7 - 1 kW 92 x 45 x 30mm 30mm
RS Stock No. 125-1113
Mfr. Part No.SKM300GB12E4
BrandSemikron
MYR1,256.52
Each
units
Dual Half Bridge 422 A 1200 V 20V 2 N Screw Mount SEMITRANS3 7 12kHz - 106.4 x 61.4 x 30.5mm 30.5mm
RS Stock No. 166-0844
Mfr. Part No.FS50R12KE3BOSA1
BrandInfineon
MYR526.889
Each (In a Tray of 10)
units
3 Phase Bridge 3 Phase 75 A 1200 V ±20V - N Panel Mount AG-ECONO2-6 - - 270 W 93 x 45 x 17mm 17mm
RS Stock No. 111-6094
Mfr. Part No.FS50R12KE3BOSA1
BrandInfineon
MYR385.23
Each
units
3 Phase Bridge 3 Phase 75 A 1200 V ±20V - N Panel Mount AG-ECONO2-6 - - 270 W 93 x 45 x 17mm 17mm
RS Stock No. 687-4964
Mfr. Part No.SKM150GB12T4
BrandSemikron
MYR428.05
Each
units
Dual Half Bridge Series 232 A 1200 V ±20V - N Panel Mount SEMITRANS2 7 - - 94 x 34 x 30.1mm 30.1mm
RS Stock No. 468-2454
Mfr. Part No.SKM200GB125D
BrandSemikron
MYR807.35
Each
units
Dual Half Bridge Series 200 A 1200 V ±20V - N Panel Mount SEMITRANS3 3 - - 106.4 x 61.4 x 30.5mm 30.5mm
RS Stock No. 168-4541
Mfr. Part No.2MBI200U4B-120-50
MYR559.498
Each (In a Box of 20)
units
Series Series 200 A 1200 V ±20V - N Panel Mount M233 7 - 1.04 kW 92 x 45 x 30mm 30mm
RS Stock No. 168-4537
Mfr. Part No.2MBI100TA-060-50
MYR233.073
Each (In a Box of 20)
units
Series Series 100 A 600 V ±20V - N Panel Mount M232 7 - 310 W 92 x 34 x 30mm 30mm
RS Stock No. 462-861
Mfr. Part No.2MBI200U4B-120-50
MYR591.62
Each
units
Series Series 200 A 1200 V ±20V - N Panel Mount M233 7 - 1.04 kW 92 x 45 x 30mm 30mm
RS Stock No. 462-843
Mfr. Part No.2MBI100TA-060-50
MYR202.53
Each
units
Series Series 100 A 600 V ±20V - N Panel Mount M232 7 - 310 W 92 x 34 x 30mm 30mm
RS Stock No. 125-1115
Mfr. Part No.SKM400GB125D
BrandSemikron
MYR1,359.80
Each
units
Dual Half Bridge 400 A 1200 V 20V 2 N Screw Mount SEMITRANS3 7 12kHz - 106.4 x 61.4 x 30.5mm 30.5mm
RS Stock No. 687-4973
Mfr. Part No.SKM200GB12E4
BrandSemikron
MYR552.76
Each
units
Dual Half Bridge Series 314 A 1200 V ±20V - N Panel Mount SEMITRANS3 7 - - 106.4 x 61.4 x 30mm 30mm
RS Stock No. 468-2498
Mfr. Part No.SKM300GB125D
BrandSemikron
MYR865.03
Each
units
Dual Half Bridge Series 300 A 1200 V ±20V - N Panel Mount SEMITRANS3 7 - - 106.4 x 61.4 x 30.5mm 30.5mm
RS Stock No. 111-6090
Mfr. Part No.FS150R12KE3BOSA1
BrandInfineon
MYR912.51
Each
units
3 Phase Bridge 3 Phase 200 A 1200 V ±20V - N Panel Mount AG-ECONO3-4 - - 700 W 122 x 62 x 17mm 17mm
RS Stock No. 166-1096
Mfr. Part No.FS150R12KE3BOSA1
BrandInfineon
MYR1,401.625
Each (In a Tray of 10)
units
3 Phase Bridge 3 Phase 200 A 1200 V ±20V - N Panel Mount AG-ECONO3-4 - - 700 W 122 x 62 x 17mm 17mm
RS Stock No. 687-4958
Mfr. Part No.SKM100GB12T4
BrandSemikron
MYR377.99
Each
units
Dual Half Bridge Series 160 A 1200 V ±20V - N Panel Mount SEMITRANS2 7 - - 94 x 34 x 30.1mm 30.1mm
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...