Toshiba

Discrete Semiconductors

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  • MYR6.308
    Each (In a Pack of 5)
TK10A60W,S5VX(J N-Channel MOSFET, 9.7 A, 600 V TK, 3-Pin TO-220SIS Toshiba
  • Channel TypeN
  • Maximum Continuous Drain Current9.7 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • MYR26.00Each
Toshiba GT60M324(Q) IGBT, 60 A 900 V, 3-Pin TO-3PN
  • Maximum Continuous Collector Current60 A
  • Maximum Collector Emitter Voltage900 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation254 W
  • Package TypeTO-3PN
See similar products in IGBTs
  • MYR12.594
    Each (In a Tube of 50)
TK17A65W,S5X(M N-Channel MOSFET, 17 A, 650 V TK, 3-Pin TO-220SIS Toshiba
  • Channel TypeN
  • Maximum Continuous Drain Current17 A
  • Maximum Drain Source Voltage650 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • MYR8.282
    Each (In a Pack of 5)
TK17A65W,S5X(M N-Channel MOSFET, 17 A, 650 V DTMOSIV, 3-Pin TO-220SIS Toshiba
  • Channel TypeN
  • Maximum Continuous Drain Current17 A
  • Maximum Drain Source Voltage650 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • MYR10.062
    Each (In a Pack of 5)
TK17A65W,S5X(M N-Channel MOSFET, 17 A, 650 V TK, 3-Pin TO-220SIS Toshiba
  • Channel TypeN
  • Maximum Continuous Drain Current17 A
  • Maximum Drain Source Voltage650 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • MYR14.995
    Each (In a Pack of 2)
TK17A65W,S5X(M N-Channel MOSFET, 17 A, 650 V TK, 3-Pin TO-220SIS Toshiba
  • Channel TypeN
  • Maximum Continuous Drain Current17 A
  • Maximum Drain Source Voltage650 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • MYR12.572
    Each (In a Pack of 5)
Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in BJT & Bipolar Transistors
  • MYR12.65Each
Toshiba 2SC5198-O(Q) NPN Transistor, 10 A, 140 V, 3-Pin TO-3PN
  • Transistor TypeNPN
  • Maximum DC Collector Current10 A
  • Maximum Collector Emitter Voltage140 V
  • Package TypeTO-3PN
  • Mounting TypeThrough Hole
See similar products in BJT & Bipolar Transistors
  • MYR6.018
    Each (In a Pack of 5)
TK5P50D(T6RSS-Q) N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK Toshiba
  • Channel TypeN
  • Maximum Continuous Drain Current5 A
  • Maximum Drain Source Voltage500 V
  • Package TypeDPAK (TO-252)
  • Mounting TypeSurface Mount
See similar products in MOSFETs
  • MYR10.734
    Each (In a Pack of 5)
Toshiba 2SC5200-O(S1,F,S) NPN Bipolar Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in BJT & Bipolar Transistors
  • MYR5.108
    Each (In a Tube of 50)
TK42A12N1,S4X(S N-Channel MOSFET, 42 A, 120 V TK, 3-Pin TO-220SIS Toshiba
  • Channel TypeN
  • Maximum Continuous Drain Current42 A
  • Maximum Drain Source Voltage120 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • MYR3.56
    Each (In a Pack of 5)
TK42A12N1,S4X(S N-Channel MOSFET, 42 A, 120 V TK, 3-Pin TO-220SIS Toshiba
  • Channel TypeN
  • Maximum Continuous Drain Current42 A
  • Maximum Drain Source Voltage120 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • MYR3.308
    Each (In a Pack of 5)
TK42A12N1,S4X(S N-Channel MOSFET, 42 A, 120 V TK, 3-Pin TO-220SIS Toshiba
  • Channel TypeN
  • Maximum Continuous Drain Current42 A
  • Maximum Drain Source Voltage120 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • MYR21.422
    Each (In a Tube of 25)
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
  • MYR9.28
    Each (In a Tube of 100)
Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypePNP
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in BJT & Bipolar Transistors
  • MYR12.61Each
Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypePNP
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in BJT & Bipolar Transistors
  • MYR22.07Each
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
  • MYR15.11Each
Toshiba 2SC5199-O(Q) NPN Bipolar Transistor, 12 A, 160 V, 3-Pin TO-3PL
  • Transistor TypeNPN
  • Maximum DC Collector Current12 A
  • Maximum Collector Emitter Voltage160 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in BJT & Bipolar Transistors
  • MYR3.625
    Each (In a Pack of 10)
Toshiba 2SA1244-Y(T6L1,NQ) PNP Transistor, 5 A, 50 V, 3-Pin DPAK
  • Transistor TypePNP
  • Maximum DC Collector Current5 A
  • Maximum Collector Emitter Voltage50 V
  • Package TypeDPAK (TO-252)
  • Mounting TypeSurface Mount
See similar products in BJT & Bipolar Transistors
  • MYR1.441
    Each (In a Pack of 10)
Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 → 0.75mA, 3-Pin SOT-346 (SC-59)
  • Channel TypeN
  • Idss Drain-Source Cut-off Current0.3 → 0.75mA
  • Maximum Drain Source Voltage10 V
  • Maximum Gate Source Voltage-30 V
  • Maximum Drain Gate Voltage-50V
See similar products in JFETs
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